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DMN2004TK Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN2004TK
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2004TK Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN2004TK
Document number: DS30936 Rev. 5 - 2
2 of 6
www.diodes.com
November 2010
© Diodes Incorporated
DMN2004TK
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 4)
Steady
State
TA = 25°C
TA = 85°C
ID
540
390
mA
Pulsed Drain Current (Note 5)
IDM
1.5
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
PD
150
mW
Thermal Resistance, Junction to Ambient
RθJA
833
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.8
0.9
300
⎯
nA
nA
VDS = 16V, VGS = 0V
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±1
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.5
⎯
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
0.4
0.5
0.7
0.55
0.70
0.9
Ω
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
Forward Transfer Admittance
|Yfs|
200
⎯
⎯
ms
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 6)
VSD
0.5
⎯
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
150
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
20
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
⎯
8.5
⎯
ns
VDD = 10V, RL = 47Ω, ID = 200mA,
VGEN = 4.5V, RG = 10Ω
Rise Time
tr
⎯
9.1
⎯
ns
Turn-Off Delay Time
td(off)
⎯
51
⎯
ns
Fall Time
tf
⎯
28
⎯
ns
Notes:
4. Device mounted on FR-4 PCB.
5. Pulse width
≤10μS, Duty Cycle ≤1%
6. Short duration pulse test used to minimize self-heating effect.



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