DMN3033LSN

Document number: DS31116 Rev. 5 - 2

1 of 5

www.diodes.com

January 2010

© Diodes Incorporated

DMN3033LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low Gate Charge

•

•

30 m

Ω @V

•

40 m

Ω @V

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

•

"Green" Device (Note 4)

Mechanical Data

•

Case: SC-59

•

Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.008 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current (Note 1) Continuous

6

5

A

Pulsed Drain Current (Note 2)

24

A

Body-Diode Continuous Current (Note 1)

2.25

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

1.4

W

Thermal Resistance, Junction to Ambient (Note 1) t

≤10s

90

°C /W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t

≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SC-59

Top View

Equivalent Circuit

Source

Gate

Drain

D

G

S

Pin Configuration

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