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2DB1386R-13 Datasheet(PDF) 1 Page - Diodes Incorporated |
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2DB1386R-13 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  2DB1386Q/R PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.072 grams (approximate) SOT89-3L 3 1 2,4 COLLECTOR EMITTER BASE 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -5 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 1 W Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C RθJA 125 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -30 ⎯ ⎯ V IC = -50μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -20 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 ⎯ ⎯ V IE = -50μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ -0.5 μA VCB = -20V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ -0.5 μA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -1.0 V IC = -4A, IB = -0.1A 2DB1386Q 120 ⎯ 270 DC Current Gain 2DB1386R hFE 180 ⎯ 390 ⎯ IC = -0.5A, VCE = -2V SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 55 ⎯ pF VCB = -20V, IE = 0, f = 1MHz Current Gain-Bandwidth Product fT ⎯ 100 ⎯ pF VCE = -6V, IE = 50mA, f = 30MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. DS31147 Rev. 5 - 2 1 of 4 www.diodes.com 2DB1386Q/R © Diodes Incorporated |
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