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DMC3036LSD Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMC3036LSD Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMC3036LSD Document number: DS31311 Rev. 4 - 2 2 of 7 www.diodes.com October 2008 © Diodes Incorporated DMC3036LSD Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 ⎯ 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 28 51 36 61 m Ω VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A Forward Transfer Admittance |Yfs| ⎯ 7.7 ⎯ S VDS = 5V, ID = 6.9A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 384 ⎯ pF Output Capacitance Coss ⎯ 67 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 48 ⎯ pF VDS = 15V, VGS = 0V, f = 1.0MHz Gate Resistance RG ⎯ 1.3 ⎯ Ω VGS = 0V VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 4.3 8.6 ⎯ VDS = 10V, VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A Gate-Source Charge Qgs ⎯ 1.2 ⎯ VDS = 10V, VGS = 10V, ID = 10A Gate-Drain Charge Qgd ⎯ 2.5 ⎯ nC VDS = 10V, VGS = 10V, ID = 10A Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1 ⎯ -2.2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 30 53 36 64 m Ω VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A Forward Transfer Admittance |Yfs| ⎯ 8.8 ⎯ S VDS =-5V, ID = -6A Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 637 ⎯ pF Output Capacitance Coss ⎯ 147 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 105 ⎯ pF VDS = -15V, VGS = 0V, f = 1.0MHz Gate Resistance RG ⎯ 3.3 ⎯ Ω VGS = 0V, VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 6.8 13.7 ⎯ VDS = 15V, VGS = -4.5V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A Gate-Source Charge Qgs ⎯ 1.6 ⎯ VDS = 15V, VGS = -10V, ID = 6A Gate-Drain Charge Qgd ⎯ 4.2 ⎯ nC VDS = 15V, VGS = -10V, ID = 6A Notes: 5. Short duration pulse test used to minimize self-heating effect. |
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