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DMP3035LSS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3035LSS Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() DMP3035LSS Document number: DS31443 Rev. 6 - 2 2 of 5 www.diodes.com August 2009 © Diodes Incorporated DMP3035LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ⎯ ⎯ ±100 ±800 nA VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1 ⎯ -2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 11 15 27 14 18 36 m Ω VGS = -20V, ID = -11A VGS = -10V, ID = -8A VGS = -4.5V, ID = -5A Forward Transconductance gfs ⎯ 12 ⎯ S VDS = -10V, ID = -12A Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.1 V VGS = 0V, IS = -2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 1655 ⎯ pF VDS = -20V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 286 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 240 ⎯ pF Gate Resistance RG ⎯ 2.3 ⎯ Ω VGS = 0V, VDS = 0V, f = MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 15.3 30.7 ⎯ nC VDS = -15V, VGS = -4.5V, ID = -8A VDS = -15V, VGS = -10V, ID = -8A Gate-Source Charge Qgs ⎯ 3.5 ⎯ VDS = -15V, VGS = -10V, ID = -8A Gate-Drain Charge Qgd ⎯ 7.9 ⎯ VDS = -15V, VGS = -10V, ID = -8A Turn-On Delay Time td(on) ⎯ 5.1 ⎯ ns VGS = -10V, VDS = -15V, RD = 15Ω, RG = 6Ω Rise Time tr ⎯ 8 ⎯ Turn-Off Delay Time td(off) ⎯ 46 ⎯ Fall Time tf ⎯ 30 ⎯ Notes: 5. Short duration pulse test used to minimize self-heating effect. Fig. 1 Typical Output Characteristic 0 4 8 12 16 20 0 123 4 5 -V , DRAIN-SOURCE VOLTAGE (V) DS V = -1.5V GS V = -2.0V GS V = -2.5V GS V = -3.0V GS V = -4.0V GS V = -10V GS Fig. 2 Typical Transfer Characteristic 0 4 8 12 16 20 1 1.5 2 2.5 3 3.5 -V , GATE-SOURCE VOLTAGE (V) GS T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A |
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