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DP0150ALP4 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DP0150ALP4 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DP0150ALP4 / DP0150BLP4 Document number: DS31493 Rev. 3 - 2 1 of 4 www.diodes.com July 2009 © Diodes Incorporated DP0150ALP4 / DP0150BLP4 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Die Construction • Ultra-Small Leadless Surface Mount Package • Ultra-low Profile (0.40mm max) • Complementary NPN Type Available (DN0150ALP4 / DN0150BLP4) • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • Case: DFN1006H4-3 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections Indicator: Collector Dot • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Ordering Information: See Page 3 • Marking Information: See Page 3 • Weight: 0.0008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current - Continuous IC -100 mA Peak Pulse Collector Current ICM -200 mA Base Current IB -30 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 450 mW Thermal Resistance, Junction to Ambient (Note 3) RθJA 278 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -50 — — V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO -50 — — V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 — — V IE = -10μA, IC = 0 Collector Cut-Off Current ICBO — — -0.1 μA VCB = -50V, IE = 0 Emitter Cut-Off Current IEBO — — -0.1 μA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) — -0.15 -0.3 V IC = -100mA, IB = -10mA DC Current Gain DP01510ALP4 DP01510BLP4 hFE 120 — 240 — VCE = -6V, IC = -2mA 200 — 400 SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 80 — — MHz VCE = -10V, IE = 1mA f = 30MHz Output Capactiance Cob — 1.6 — pF VCB = -10V, IE = 0, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2% Bottom View Top View Device Schematic C E B 1 2 3 Please click here to visit our online spice models database. |
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