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DMN66D0LT Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN66D0LT Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN66D0LT N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.002 grams (approximate) Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain SOT-523 TOP VIEW G S D ESD PROTECTED, 1KV TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage (Note 1) Continuous VGSS ±20 V Drain Current (Note 1) Continuous Continuous @ 100°C Pulsed ID 115 73 800 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C IDSS ⎯ ⎯ 1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) 1.2 ⎯ 2.0 V VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.115A Static Drain-Source On-Resistance @ TJ = 25°C @ TJ = 125°C RDS (ON) ⎯ 3.5 3.0 6 5 Ω VGS = 10V, ID = 0.115A Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.115A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 23 ⎯ pF Output Capacitance Coss ⎯ 3.4 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 1.4 ⎯ pF VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns Turn-Off Delay Time tD(OFF) ⎯ 33 ⎯ ns VDD = 30V, ID = 0.115A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Short duration pulse test used to minimize self-heating effect. DMN66D0LT Document number: DS31530 Rev. 2 - 2 1 of 4 www.diodes.com September 2008 © Diodes Incorporated Please click here to visit our online spice models database. |
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