DMN4800LSS datasheet(4/6 Pages) DIODES

Part #	DMN4800LSS

Description	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 6 page

DMN4800LSS

Document number: DS31736 Rev. 5 - 2

4 of 6

www.diodes.com

July 2009

DMN4800LSS

100

1,000

10,000

Fig. 9 Typical Total Capacitance

, DRAIN-SOURCE VOLTAGE (V)

Ciss

Crss

Coss

Fig. 10 Total Gate Charge

Q , TOTAL GATE CHARGE (nC)

I = 11.6A

I = 9A

Fig. 11 Typical Leakage Current vs. Drain-Source Voltage

, DRAIN-SOURCE VOLTAGE (V)

100

1,000

10,000

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

0.0001

0.001

0.01

0.1

100

1,000

Fig. 12 Transient Thermal Response

t , PULSE DURATION TIME (s)

0.001

0.01

0.1

T - T = P * R

(t)

Duty Cycle, D = t /t

(t) = r(t) *

θJA

= 85°C/W

P(pk)

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

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