DMN2020LSN

Document number: DS31946 Rev. 2 - 2

1 of 6

www.diodes.com

September 2009

© Diodes Incorporated

DMN2020LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

ESD Protected Up To 2KV

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SC-59

•

Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking Information: See Page 2

•

Ordering Information: See Page 2

•

Weight: 0.008 grams (approximate)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

Continuous

±12

V

Continuous Drain Current

Steady

State

6.9

4.5

A

Pulsed Drain Current (Note 4)

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Power Dissipation (Note 3)

0.61

W

204

°C /W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

SC-59

TOP VIEW

Pin Out Configuration

TOP VIEW

EQUIVALENT CIRCUIT

Source

Gate

Protection

Diode

Gate

Drain

D

G

S

ESD PROTECTED TO 2kV

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