DMG4435SSS

Document number: DS32041 Rev. 2 - 2

2 of 6

www.diodes.com

March 2010

© Diodes Incorporated

DMG4435SSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-1.0

-1.7

-2.5

V

Static Drain-Source On-Resistance

-

13

16

mΩ

15

20

21

29

Forward Transfer Admittance

-

22

-

S

Diode Forward Voltage

-

-0.74

-1.0

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

1614

-

pF

f = 1.0MHz

Output Capacitance

-

226

-

pF

Reverse Transfer Capacitance

-

214

-

pF

Gate Resistance

-

6.8

-

Ω

Total Gate Charge at 10V

-

35.4

-

nC

Total Gate Charge at 5V

-

18.9

-

nC

Gate-Source Charge

-

4.6

-

nC

Gate-Drain Charge

-

5.7

-

nC

Turn-On Delay Time

-

8.6

-

ns

Turn-On Rise Time

-

12.7

-

ns

Turn-Off Delay Time

-

44.9

-

ns

Turn-Off Fall Time

-

22.8

-

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

5

10

15

20

25

30

0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= -2.5V

GS

V

= -2.2V

GS

V

= -3.5V

GS

V

= -3.0V

GS

V

= -4.5V

GS

V

= -4.0V

GS

V

= -10V

GS

0

0.5

1

1.5

2

2.5

3

3.5

4

Fig. 2 Typical Transfer Characteristic

-V

, GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -5V

DS