FMMT495 datasheet(1/2 Pages) DIODES

Part #	FMMT495

Description	SOT23 NPN SILICON PLANAR MEDIUM

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Manufacturer	DIODES [Diodes Incorporated]

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SOT23 NPN SILICON PLANAR MEDIUM

POWER HIGH PERFORMANCE TRANSISTOR

ISSUE 3 - NOVEMBER 1995

7

PARTMARKING DETAIL

495

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

170

V

Collector-Emitter Voltage

VCEO

150

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

1A

Peak Pulse Current

ICM

2A

Base Current

IB

200

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

170

V

IC=100µA

VCEO(sus)

150

V

IC=10mA*

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Currents

ICBO

100

nA

VCB=150V

ICES

100

nA

VCE=150V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.2

0.3

V

IC=250mA, IB=25mA*

IC=500mA, IB=50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.0

V

IC=500mA, IB=50mA*

Base-Emitter

Turn On Voltage

VBE(on)

1.0

V

IC=500mA, VCE=10V*

Static Forward Current

Transfer Ratio

hFE

100

50

10

300

IC=1mA, VCE=10V

IC=250mA, VCE=10V*

IC=500mA, VCE=10V*

IC=1A, VCE=10V*

Transition Frequency

fT

100

MHz

IC=50mA, VCE=10V

f=100MHz

Collector-Base

Breakdown Voltage

Cobo

10

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMT495

C

B

E

3 - 123

FMMT495

3 - 124

10A

1A

10mA

100mA

1mA

-55°C

+25 ° C

+100 ° C

I+/I*=10

VCE(sat) v IC

IC-Collector Current

VBE(sat) v IC

0

0.2

100mA

10mA

0.4

0.6

0.8

1.0

10A

1A

hFE V IC

IC-Collector Current

1mA

100mA

10mA

10A

1A

80

0

240

160

320

10mA

1mA

IC-Collector Current

VBE(on) v IC

100mA

1A

10A

0.6

0.8

1.0

0.4

0.2

0

IC-Collector Current

VCE(sat) v IC

1mA

0

0.1

100mA

10mA

+25 ° C

0.2

0.3

0.4

I+/I*=10

10A

1A

0.4

+100 °C

-55 °C

+25 °C

+100 ° C

-55°C

+25 ° C

-55 °C

+25 °C

+100 °C

I+/I*=10

V+-=10V

10

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

0.1

10

100

1s

DC

100ms

10ms

100µs

1ms

1

0

0.1

0.3

0.2

1mA

0.01

I+/I*=50

0.001

1000

TYPICAL CHARACTERISTICS

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