FMMT558 datasheet(1/2 Pages) DIODES

Part #	FMMT558

Description	SOT23 PNP SILICON PLANAR

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 JANUARY 1996

FEATURES

* Excellent hFE characteristics at IC=100mA

* Low saturation voltages

COMPLEMENTARY TYPE FMMT458

PARTMARKING DETAIL

558

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-400

V

Collector-Emitter Voltage

VCEO

-400

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-500

mA

Continuous Collector Current

IC

-150

mA

Base Current

IB

-200

mA

Power Dissipation

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-400

V

IC=-100µA

Collector-Emitter Breakdown

Voltage

VBR(CEO)

-400

V

IC=-10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

V

IE=-100µA

Collector Cut-Off Current

ICBO; ICES

-100

nA

VCB=-320V; V+-=320V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-4V

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.2

-0.5

V

IC=-20mA, IB=-2mA *

IC=-50mA, IB=-6mA *

Base-Emitter

Saturation Voltage

VBE(sat)

-0.9

V

IC=-50mA, IB=-5mA *

Base-Emitter Turn On Voltage

VBE(on)

-0.9

V

IC=-50mA, VCE=-10V *

Static Forward Current Transfer

Ratio

hFE

100

15

300

IC=-1mA, VCE=-10V

IC=-50mA, VCE=-10V *

IC=-100mA, VCE=-10V*

Transition Frequency

fT

50

MHz

IC=-10mA, VCE=-20V

f=20MHz

Collector-Base Breakdown

Voltage

Cobo

5pF

VCB=-20V, f=1MHz

Switching times

ton

toff

95

1600

ns

IC=-50mA, VCE=-100V

IB1=5mA, IB2=-10mA

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FMMT558

3 - 134

C

B

E

3 - 133

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

VCE(sat) v IC

I+ -

Collector Current (Amps)

-55°C

+25°C

+100°C

+175°C

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

I+ -

Collector Current (Amps)

VBE(on) v IC

IC/IB=10

IC/IB=50

IC/IB=10

VCE=10V

300

200

100

0.001

IC/IB=20

-55°C

+25°C

+100°C

+175°C

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

10V

100V

1s

DC

100ms

10ms

100µs

1ms

1V

0.01

1000V

0.001

FMMT558

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