ZXMC3A16DN8 datasheet(4/10 Pages) DIODES

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ZXMC3A16DN8

ISSUE 1 - OCTOBER 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

ID=250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

0.5

µA

VDS=30V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

=250

µA, VDS=VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.035

0.050

VGS=10V, ID=9A

VGS=4.5V, ID=7.4A

Forward Transconductance

(1)(3)

gfs

13.5

VDS=15V,ID=9A

DYNAMIC

(3)

Input Capacitance

Ciss

796

VDS=25 V, VGS=0V,

f=1MHz

Output Capacitance

Coss

137

Reverse Transfer Capacitance

Crss

SWITCHING

(2) (3)

Turn-On Delay Time

td(on)

3.0

VDD =15V, ID=3.5A

RG=6.0Ω,VGS=10V

Rise Time

6.4

Turn-Off Delay Time

td(off)

21.6

Fall Time

9.4

Gate Charge

9.2

VDS=15V,VGS=5V,

ID=3.5A

Total Gate Charge

17.5

VDS=15V,VGS=10V,

ID=3.5A

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

3.1

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

VSD

0.85

0.95

TJ=25°C, IS=5.1A,

VGS=0V

Reverse Recovery Time

(3)

trr

17.8

TJ=25°C, IF=3.5A,

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

Qrr

11.6

N-CHANNEL

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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