ZXMC4559DN8

ISSUE 5 - MAY 2005

2

SEMICO NDUC TORS

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a) (d)

100

°C/W

Junction to Ambient

(b) (e)

69

°C/W

Junction to Ambient

(b) (d)

58

°C/W

THERMAL RESISTANCE

Notes

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t

10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.

(d) For a device with one active die.

(e) For device with 2 active die running at equal power.

PARAMETER

SYMBOL N-Channel

P-Channel

UNIT

Drain-Source Voltage

60

-60

V

Gate-Source Voltage

20

20

V

(b) (d)

(b) (d)

(a) (d)

4.7

3.7

3.6

-3.9

-2.8

-2.6

A

A

A

Pulsed Drain Current

(c)

22.2

-18.3

A

Continuous Source Current (Body Diode)

(b)

3.4

-3.2

A

Pulsed Source Current (Body Diode)(c)

22.2

-18.3

A

Power Dissipation at TA=25°C

(a) (d)

Linear Derating Factor

1.25

10

W

mW/°C

Power Dissipation at TA=25°C

(a) (e)

Linear Derating Factor

1.8

14

W

mW/°C

Power Dissipation at TA=25°C

(b) (d)

Linear Derating Factor

2.1

17

W

mW/°C

Operating and Storage Temperature Range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS.