ZXMD63N02X datasheet(4/7 Pages) DIODES

4 / 7 page

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

ID=250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=20V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS=± 12V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

0.7

ID=250µA, VDS= VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.130

0.150

Ω

VGS=4.5V, ID=1.7A

VGS=2.7V, ID=0.85A

Forward Transconductance (3)

gfs

2.6

VDS=10V,ID=0.85A

DYNAMIC (3)

Input Capacitance

Ciss

350

VDS=15 V, VGS=0V,

f=1MHz

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

Turn-On Delay Time

td(on)

3.4

VDD =10V, ID=1.7A

RG=6.0Ω, RD=5.7Ω

(Refer to test

circuit)

Rise Time

8.1

Turn-Off Delay Time

td(off)

13.5

Fall Time

9.1

Total Gate Charge

6nC

VDS=16V,VGS=4.5V,

ID=1.7A

(Refer to test

circuit)

Gate-Source Charge

Qgs

0.65

Gate Drain Charge

Qgd

2.5

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.95

Tj=25°C, IS=1.7A,

VGS=0V

Reverse Recovery Time (3)

trr

15.0

Tj=25°C, IF=1.7A,

di/dt= 100A/

µs

Reverse Recovery Charge(3)

Qrr

5.9

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ZXMD63N02X

ISSUE

1 - JUNE 2004

ZXMD63N02X Datasheet(PDF) 4 Page - Diodes Incorporated

ZXMD63N02X Datasheet(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL