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ZXMD63C03XTC Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXMD63C03XTC
Description  30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  12 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMD63C03XTC Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXMD63C03X
ISSUE 2 - SEPTEMBER 2007
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
RθJA
143
°C/W
Junction to Ambient (b)(d)
RθJA
100
°C/W
Junction to Ambient (a)(e)
RθJA
120
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-Source Voltage
VDSS
30
-30
V
Gate- Source Voltage
VGS
20
V
Continuous Drain Current
(VGS=4.5V; TA=25°C)(b)(d)
(VGS=4.5V; TA=70°C)(b)(d)
ID
2.3
1.8
-2.0
-1.6
A
A
Pulsed Drain Current (c)(d)
IDM
14
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
IS
1.5
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
ISM
14
-9.6
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
0.87
6.9
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.04
8.3
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C



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