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ZXMN2A04DN8TC Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXMN2A04DN8TC
Description  DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMN2A04DN8TC Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXMN2A04DN8
ISSUE 1 - JULY 2004
SEMICO NDUC TORS
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R JA
100
°C/W
Junction to Ambient
(b) (e)
R JA
70
°C/W
Junction to Ambient
(b) (d)
R JA
60
°C/W
THERMAL RESISTANCE
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
20
V
Gate Source Voltage
VGS
12
V
Continuous Drain Current
(VGS=10V; TA=25°C)
(b) (d)
(VGS=10V; TA=70°C)
(b) (d)
(VGS=10V; TA=25°C)
(a) (d)
ID
7.7
6.2
5.9
A
A
A
Pulsed Drain Current
(c)
IDM
38
A
Continuous Source Current (Body Diode)
(b)
IS
2.9
A
Pulsed Source Current (Body Diode)
(c)
ISM
38
A
Power Dissipation at TA=25°C
(a) (d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C
(a) (e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at TA=25°C
(b) (d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS



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