ZXMN3B01F

SEMICO NDUC TORS

ISSUE 1 - DECEMBER 2005

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

30

V

Zero Gate Voltage Drain Current

1

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

0.7

V

I

D

Static Drain-Source On-State

Resistance

(1)

0.150

0.240

Forward Transconductance

(1) (3)

4S

DYNAMIC

(3)

Input Capacitance

258

pF

f=1MHz

Output Capacitance

50

pF

Reverse Transfer Capacitance

30

pF

SWITCHING

(2) (3)

Turn-On Delay Time

2.69

ns

Rise Time

3.98

ns

Turn-Off Delay Time

8ns

Fall Time

5.27

ns

Total Gate Charge

2.93

nC

Gate-Source Charge

0.57

nC

Gate-Drain Charge

0.92

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.85

0.95

V

Reverse Recovery Time

(3)

10.85

ns

di/dt= 100A/ s

Reverse Recovery Charge

(3)

5NC

NOTES

(1) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.