CEP84A4 datasheet(1/4 Pages) CET

Part #	CEP84A4

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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N-Channel Enhancement Mode Field Effect Transistor

CEP84A4/CEB84A4

FEATURES

40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

@ TC = 100 C

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

PD

IDM

40

0.47

71

360

62

±20

V

W

A

V

W/ C

1

G

S

D

G

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

RDS(ON) = 7.8mΩ @VGS = 4.5V.

Lead free product is acquired.

http://www.cetsemi.com

Rev 1. 2010.Oct.

Details are subject to change without notice .

S

G

D

Drain Current-Continuous@ TC = 25 C

ID

90

A

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

2.1

RθJC

RθJA

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