ZXMP6A13G

Document Number DS32032 Rev. 4 - 2

4 of 8

www.diodes.com

December 2009

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A Product Line of

Diodes Incorporated

ZXMP6A13G

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0

⎯

⎯

V

Static Drain-Source On-Resistance (Note 5)

⎯

⎯

0.390

Ω

0.595

Forward Transconductance (Notes 5 & 6)

⎯

1.8

⎯

S

Diode Forward Voltage (Note 5)

⎯

-0.85

-0.95

V

Reverse recovery time (Note 6)

21.1

⎯

ns

Reverse recovery charge (Note 6)

⎯

19.3

⎯

nC

DYNAMIC CHARACTERISTICS (

Input Capacitance

⎯

219

⎯

pF

f= 1MHz

Output Capacitance

⎯

25.7

⎯

pF

Reverse Transfer Capacitance

⎯

20.5

⎯

pF

Total Gate Charge (Note 7)

⎯

2.9

⎯

nC

Total Gate Charge (Note 7)

⎯

5.9

⎯

nC

Gate-Source Charge (Note 7)

⎯

0.74

⎯

nC

Gate-Drain Charge (Note 7)

⎯

1.5

⎯

nC

Turn-On Delay Time (Note 7)

⎯

1.6

⎯

ns

Turn-On Rise Time (Note 7)

⎯

2.2

⎯

ns

Turn-Off Delay Time (Note 7)

⎯

11.2

⎯

ns

Turn-Off Fall Time (Note 7)

⎯

5.7

⎯

ns

Notes:

5. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

6. For design aid only, not subject to production testing.

7. Switching characteristics are independent of operating junction temperatures.