ZXMP6A16KTC datasheet(4/8 Pages) DIODES

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ZXMP6A16K

Issue 3 - June 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown voltage V(BR)DSS

-60

ID= -250 A, VGS=0V

Zero gate voltage drain current

IDSS

-1.0

AVDS= -60V, VGS=0V

Gate-body leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-source threshold voltage

VGS(th)

-1.0

ID= -250 A, VDS=VGS

Static drain-source on-state

resistance (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle

2%.

RDS(on)

0.085

VGS= -10V, ID= -2.9A

0.125

VGS= -4.5V, ID = -2.4A

Forward transconductance(*) (‡)

gfs

7.2

VDS= -15V, ID= -2.9A

Dynamic(‡)

Input capacitance

Ciss

1021

VDS= -30V, VGS=0V

f=1MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

Switching (†) (‡)

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

td(on)

3.5

VDD= -30V, ID= -1A

RG≅6.0 , VGS= -10V

Rise time

4.1

Turn-off delay time

td(off)

Fall time

Gate charge

12.1

VDS= -30V, VGS= -5V

ID= -2.9A

Total gate charge

24.2

VDS= -30V, VGS= -10V

ID= -2.9A

Gate-source charge

Qgs

2.5

Gate drain charge

Qgd

3.7

Source-drain diode

Diode forward voltage(*)

VSD

-0.85

-0.95

Tj=25°C, IS= -3.4A,

VGS=0V

Reverse recovery time(‡)

trr

29.2

Tj=25°C, IS= -2A,

di/dt=100A/ s

Reverse recovery charge(‡)

Qrr

39.6

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