ZXMP6A17DN8TC datasheet(4/7 Pages) DIODES

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ZXMP6A17DN8

SEMICO NDUC TORS

ISSUE 1 - OCTOBER 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-60

ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1.0

AVDS=-60V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS= 20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-1.0

=-250 A, VDS=VGS

Static Drain-Source On-State

Resistance

(1)

RDS(on)

0.125

0.190

VGS=-10V, ID=-2.3A

VGS=-4.5V, ID=-1.9A

Forward Transconductance

(1)(3)

gfs

4.7

VDS=-15V,ID=-2.3A

DYNAMIC

(3)

Input Capacitance

Ciss

637

VDS=-30 V, VGS=0V,

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING

(2) (3)

Turn-On Delay Time

td(on)

2.6

VDD =-30V, ID=-1A

RG≅6.0Ω,VGS=-10V

Rise Time

3.4

Turn-Off Delay Time

td(off)

26.2

Fall Time

11.3

Gate Charge

9.8

VDS=-30V,VGS=-5V,

ID=-2.2A

Total Gate Charge

17.7

VDS=-30V,VGS=-10V,

ID=-2.2A

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

4.4

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

VSD

-0.85

-0.95

TJ=25°C, IS=-2A,

VGS=0V

Reverse Recovery Time

(3)

trr

25.1

TJ=25°C, IF=-1.7A,

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

Qrr

27.2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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