ZXMP6A18DN8TC datasheet(4/7 Pages) DIODES

4 / 7 page

ZXMP6A18DN8

ISSUE 1 - MAY 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-60

ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1.0

AVDS=-60V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS= 20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-1.0

=-250 A,

VDS=VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.055

0.080

VGS=-10V, ID=-3.5A

VGS=-4.5V, ID=-2.9A

Forward Transconductance

(1)(3)

gfs

8.7

VDS=-15V,ID=-3.5A

DYNAMIC

(3)

Input Capacitance

Ciss

1580

VDS=-30 V, VGS=0V,

f=1MHz

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

140

SWITCHING

(2) (3)

Turn-On Delay Time

td(on)

4.6

VDD =-30V, ID=-1A

RG≅6.0 ,VGS=-10V

Rise Time

5.8

Turn-Off Delay Time

td(off)

Fall Time

Gate Charge

VDS=-30V,VGS=-5V,

ID=-3.5A

Total Gate Charge

VDS=-30V,VGS=-10V,

ID=-3.5A

Gate-Source Charge

Qgs

3.9

Gate-Drain Charge

Qgd

9.8

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

VSD

-0.85

-0.95

TJ=25°C, IS=-4.2A,

VGS=0V

Reverse Recovery Time

(3)

trr

TJ=25°C, IF=-2.1A,

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

Qrr

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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