CEU01N65 datasheet(2/4 Pages) CET

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Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

10.5

8.5

2.5

4.5

-10

Ω

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

Typ

Max

650

VDS = 650V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 0.6A

VDS = 10V, ID = 0.6A

VDD = 300V, ID = 1.2A,

VGS = 10V,RGEN = 4.7Ω

VDS = 480V, ID = 1.2A,

VGS = 10V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 0.6A

215

5.8

1.9

2.4

1.2

1.5

38.6

14.3

29.2

14.6

11.6

CED01N65/CEU01N65

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Device Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

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