ZXTP717MA datasheet(4/7 Pages) DIODES

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ZXTP717MA

Document Number DS31881 Rev. 5 - 2

4 of 7

www.diodes.com

January 2011

A Product Line of

Diodes Incorporated

ZXTP717MA

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-20

-35

IC = -100 µA

Collector-Emitter Breakdown Voltage (Note 7)

BVCEO

-12

-25

IC = -10 mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.5

IE = -100 µA

Collector Cutoff Current

ICBO

-100

VCB = -16V

Emitter Cutoff Current

IEBO

-100

nA

VEB = -6V

Collector Emitter Cutoff Current

ICES

-100

VCES = -10V

Static Forward Current Transfer Ratio (Note 7)

hFE

300

180

475

450

275

100

IC = -10mA, VCE = -2V

IC = -100mA, VCE = -2V

IC = -2.5A, VCE = -2V

IC = -8A, VCE = -2V

IC = -10A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 7)

VCE(sat)

-10

-100

-195

-240

-17

-140

-150

-300

-310

IC =- 0.1A, IB = -10mA

IC = -1A, IB = -10mA

IC = -1.5A, IB = -50mA

IC = -3A, IB = -50mA

IC = -4A, IB = -150mA

Base-Emitter Turn-On Voltage (Note 7)

VBE(on)

-0.87

-0.96

IC = -4A, VCE = -2V

Base-Emitter Saturation Voltage (Note 7)

VBE(sat)

-0.97

-1.07

IC = -4A, IB = -150mA

Output Capacitance

Cobo

VCB = -10V. f = 1MHz

Transition Frequency

100

110

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Turn-On Time

ton

VCC = -6V, IC = -2A

IB1 = IB2 = -50mA

Turn-Off Time

toff

130

Notes:

7. Measured under pulsed conditions. Pulse width

≤ 300 µs. Duty cycle ≤ 2%.

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