CEU6355 datasheet(2/4 Pages) CET

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CED6355/CEU6355

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

-1

-3

-100

100

-1

Ω

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = -250µA

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

Typ

Max

-60

VDS = -60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -10V, ID = -26A

VGS = -4.5V, ID = -21A

VDS = -10V, ID = -26A

VDD = -30V, ID = -20A,

VGS = -10V, RGEN = 3Ω

VDS = -30V, ID = -20A,

VGS = -10V

VDS = -30V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = -26A

2020

180

32.2

5.7

5.4

42.8

-26

-1.3

Ω

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

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