ZXTP25040DFH datasheet(4/6 Pages) DIODES

4 / 6 page

ZXTP25040DFH

Issue 5 - March 2008

www.zetex.com

Electrical characteristics (at TAMB = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

-45

-75

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-40

-65

IC = -10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-collector breakdown

voltage (reverse blocking)

BVECO

-3

-8.7

IE = -100uA

Emitter-base breakdown

voltage

BVEBO

-7

-8.2

IE = -100 A

Collector cut-off current

ICBO

<-1

-50

-0.5

VCB = -45V

VCB = -45V, Tamb= 100°C

Emitter cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-170

-260

IC = -1A, IB = -20mA

(*)

-65

-85

IC = -1A, IB = -100mA

(*)

-165

-220

IC = -3A, IB = -300mA

(*)

Base-emitter saturation

voltage

VBE(sat)

-930

-1000

IC = -3A, IB = -300mA

(*)

Base-emitter turn-on voltage VBE(on)

-830

-900

IC = -3A, VCE = -2V

(*)

Static forward current

transfer ratio

hFE

300

450

900

IC = -10mA, VCE = -2V

(*)

200

300

IC = -1A, VCE = -2V

(*)

IC = -3A, VCE = -2V

(*)

Transition frequency

270

MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output capacitance

COBO

17.4

VCB = -10V, f = 1MHz

(*)

Turn-on time

t(on)

75.5

VCC = -15V. IC = -750mA,

IB1 = IB2= -15mA.

Turn-off time

t(off)

320

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