2SC5199 datasheet(1/4 Pages) TOSHIBA

Part #	2SC5199

Description	Power Amplifier Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC5199

2004-07-07

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5199

Power Amplifier Applications

• High breakdown voltage: VCEO = 160 V (min)

• Complementary to 2SA1942

• Suitable for use in 80-W high fidelity audio amplifier’s output stage.

Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

160

V

Collector-emitter voltage

VCEO

160

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

12

A

Base current

IB

1.2

A

Collector power dissipation

(Tc = 25°C)

PC

120

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 160 V, IE = 0

―

5.0

µA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

5.0

µA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 50 mA, IB = 0

160

―

V

hFE (1)

(Note)

VCE = 5 V, IC = 1 A

55

―

160

DC current gain

hFE (2)

VCE = 5 V, IC = 6 A

35

74

―

Collector-emitter saturation voltage

VCE (sat)

IC = 8 A, IB = 0.8 A

―

0.35

2.5

V

Base-emitter voltage

VBE

VCE = 5 V, IC = 6 A

―

1.0

1.5

V

Transition frequency

fT

VCE = 5 V, IC = 1 A

―

30

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

170

―

pF

Note: hFE (1) classification R: 55 to 110, O: 80 to 160

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

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