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2SC5684 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5684 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC5684 2004-07-26 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5684 Switching Regulator and High-Voltage Switching Applications • Excellent switching times (IC = 0.3 A) : tr = 0.7 µs (max), tf = 0.5 µs (max) • High collector breakdown voltage: VCEO = 800 V • High-speed DC-DC converter applications Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current Pulse ICP 1.5 A Base current IB 0.4 A Collector power dissipation PC 1.8 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 720 V, IE = 0 ― ― 100 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 900 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 800 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 10 ― ― DC current gain hFE (2) VCE = 5 V, IC = 0.08 A 15 ― 60 Collector-emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.06 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.06 A ― ― 1.2 V Rise time tr ― ― 0.7 Storage time tstg ― ― 4.5 Switching time Fall time tf IB1 = 0.06 A, IB2 = −0.12 A Duty cycle ≤ 1% ― ― 0.5 µs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.) 20 µs VCC ≈ 360 V Output IB2 IB1 Input |
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