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CMLDM3737 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMLDM3737 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8.0 V Continuous Drain Current (Steady State) ID 540 mA Maximum Pulsed Drain Current (tp=10μs) IDM 1.5 A Power Dissipation (Note 1) PD 350 mW Power Dissipation (Note 2) PD 300 mW Power Dissipation (Note 3) PD 150 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance (Note 1) ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=4.5V, VDS=0 5.0 μA IDSS VDS=16V, VGS=0 1.0 μA BVDSS VGS=0, ID=250μA 20 V VGS(th) VDS=VGS, ID=250μA 0.45 1.0 V VSD VGS=0, IS=350mA 1.2 V rDS(ON) VGS=4.5V, ID=540mA 0.55 Ω rDS(ON) VGS=2.5V, ID=500mA 0.7 Ω rDS(ON) VGS=1.8V, ID=350mA 0.9 Ω Qg(tot) VDS=10V, VGS=4.5V, ID=500mA 1.58 nC Qgs VDS=10V, VGS=4.5V, ID=500mA 0.17 nC Qgd VDS=10V, VGS=4.5V, ID=500mA 0.24 nC CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: 7C3 FEATURES: • ESD Protection up to 2kV • 350mW Power Dissipation • Very Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-563 Surface Mount Package • Complementary Dual P-Channel Device: CMLDM5757 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 APPLICATIONS: • Load Switch / Level Shifting • Battery Charging • Boost Switch • Electro-luminescent Backlighting SOT-563 CASE R1 (28-October 2010) www.centr a lsemi.com |
Similar Part No. - CMLDM3737 |
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Similar Description - CMLDM3737 |
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