Electrical Characteristics

Ta=25

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

DD

Conditions

V

DD

Operating Voltage

¾¾

2

¾

3.6

V

V

IH

²H² Input Voltage

¾¾

0.8V

DD

¾

V

DD

V

V

IL

²L² Input Voltage

¾¾

0

¾

0.2V

DD

V

t

DW

Bit Time Width

3.0V

¾¾

1.2

¾

ms

Ta=25

°C, Freq. X¢tal OSC=13.560MHz, EN=VDD. Bold values indicate -20°Cto+70°C unless

otherwise noted. 1kbps data rate 50% duty cycle. RL 50

W load (matched).

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

DD

Conditions

I

I

Data High Current

3V

@315MHz, POUT=+10dBm,

@433.92MHz

¾

12.5

¾

mA

I

O

Data Low Current

3V

@315MHz, 433.92MHz

¾

3.0

¾

mA

I

STB

EN Low & DIN Low Current

3V

¾

1

¾mA

RF and Crystal

Output Power Level

3.5V

@315MHz

¾

9

¾

dBm

@433.92MHz

¾

9

¾

dBm

Harmonics Output for 315MHz

3V

@630MHz, 2nd harm

¾-48

¾

dBc

@945MHz, 3rd harm

¾-60

¾

dBc

Harmonics Output for 433.92MHz

3V

@867.84MHz, 2nd harm

¾-45

¾

dBc

@1301.76MHz, 3rd harm

¾-55

¾

dBc

Extinction Ratio for ASK 10Kbps

3V

¾¾

70

¾

dBc

Data Rate

3V

¾

10

¾¾

kbps

Occupied Bandwidth

3V

@315MHz

¾

<700

¾

kHz

@433.92MHz

¾

<1000

¾

kHz

315MHz Single Side Band Phase

Noise

3V

@100kHz from Carrier

¾-78

¾

dBc/Hz

@1000kHz from Carrier

¾-77

¾

dBc/Hz

433.92MHz Single Side Band

Phase Noise

3V

@100kHz from Carrier

¾-78

¾

dBc/Hz

@1000kHz from Carrier

¾-76

¾

dBc/Hz

XTLIN, XTLOUT

3V

Pin capacitance

¾

2

¾

pF

External Capacitance

3V

See application circuit C3, C4

@315MHz

@433.92MHz

¾

15

18

¾

pF

Output Blanking

3V

Standby transition from low to

high

¾

500

¾ms

HT6P20B2T3/D2T3/F2T3

2

Rev. 1.00

4

September 13, 2010