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JCS7N65FB Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS7N65FB Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 10 page ![]() R JCS7N65B 版本:201103A 2/10 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 数 值 Value 项 目 Parameter 符 号 Symbol JCS7N65CB JCS7N65FB 单 位 Unit 最高漏极-源极直流电压 Drain-Source Voltage VDSS 650 650 V 7.0 7.0* A 连续漏极电流 Drain Current -continuous ID T=25℃ T=100℃ 4.3 4.3* A 最大脉冲漏极电流(注 1) Drain Current - pulse ( note 1) IDM 30 30* A 最高栅源电压 Gate-Source Voltage VGSS ±30 V 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy(note 2) EAS 590 mJ 雪崩电流(注 1) Avalanche Current(note 1) IAR 7.0 A 重复雪崩能量(注 1) Repetitive Avalanche Current(note 1) EAR 14.0 mJ 二极管反向恢复最大电压变化速率(注 3) Peak Diode Recovery dv/dt(note 3) dv/dt 4.5 V/ns 142 48 W 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 1.14 0.38 W/℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL 300 ℃ |
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