MCP14E6 datasheet(3/30 Pages) MICROCHIP

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DS25006A-page 3

MCP14E6/7/8

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ................................................................+20V

Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)

Enable Voltage .............................(VDD + 0.3V) to (GND - 5V)

Input Current (VIN>VDD)................................................50 mA

Package Power Dissipation (TA = +50oC)

8L-DFN ........................................................................ Note 3

8L-PDIP ........................................................................1.12W

8L-SOIC .....................................................................669 mW

† Notice:

Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational sections of this specifica-

tion is not intended. Exposure to maximum rating

conditions for extended periods may affect device

reliability.

DC CHARACTERISTICS(2)

Electrical Specifications:

Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

2.4

1.5

—

Logic ‘0’, Low Input Voltage

VIL

—1.3

0.8

Input Current

IIN

-1

—

µA

≤ VIN ≤ VDD

Input Voltage

VIN

-5

—

VDD + 0.3

Output

High Output Voltage

VOH

VDD – 0.025

—

DC Test

Low Output Voltage

VOL

—

0.025

DC Test

Output Resistance, High

ROH

—5

IOUT = 10 mA, VDD = 18V

Output Resistance, Low

ROL

—5

IOUT = 10 mA, VDD = 18V

Peak Output Current

IPK

—2

—

VDD = 18V(2)

Switching Time(1)

Rise Time

—12

Figure 4-1, Figure 4-2,

CL = 1000 pF

Fall Time

—15

Figure 4-1, Figure 4-2,

CL = 1000 pF

Propagation Delay Time

tD1

—45

Figure 4-1, Figure 4-2

Propagation Delay Time

tD2

—45

Figure 4-1, Figure 4-2

Enable Function (ENB_A, ENB_B)

High-Level Input Voltage

VEN_H

2.4

1.6

—

VDD = 12V, Low-to-High Transition

Low-Level Input Voltage

VEN_L

—1.2

0.8

VDD = 12V, High-to-Low Transition

Hysteresis

VHYST

—

400

—

Enable Pull-up Impedance

RENBL

0.7

1.6

3.0

VDD = 14V, ENBL = GND

Enable Pin Leakage Current

IENBL

—10

—

µA

VDD =12V,

ENB_A = ENB_B = GND

Propagation Delay Time

tD3

—35

VDD =12V, Figure 4-3

Propagation Delay Time

tD4

—35

VDD =12V, Figure 4-3

Note 1:

Switching times are ensured by design.

Tested during characterization, not production tested.

Package power dissipation is dependent on the copper pad area of the PCB.

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