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PC3SD11YTZDF Datasheet(PDF) 1 Page - Sharp Corporation

Part # PC3SD11YTZDF
Description  Low Input Drive Type Phototriac Coupler
PDF  1 Pages
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

PC3SD11YTZDF Datasheet(HTML) 1 Page - Sharp Corporation

  PC3SD11YTZDF Datasheet HTML 1Page - Sharp Corporation  
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(Notice)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment
using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets
before using any SHARP device.
Specifications are subject to change without notice for improvement.
•
•
(Internet)
Data for Sharp's optoelectronic/power devices is provided on internet. ( Address http://sharp-world.com/products/device/)
•
D2-030401-B
As of April 2004
Applications
Absolute Maximum Ratings
Outline Dimensions
Electro-optical Characteristics
PC3SD11YTZDF
Phototriac Coupler
Low Input Drive Type Phototriac Coupler
θ
Anode
mark
2.54±
0.25
0.6±
0.2
1.2±
0.3
7.62±
0.3
0.26±
0.1
0.5±
0.1
7.12±
0.3
θ : 0 to 13
1
2
3
6
5
4
1
2
3
NC
6
5
4
Internal connection
1 Anode
2 Cathode
3 NC
4 Anode/Cathode
Anode/Cathode
5 No external
connection
6
(1) Low input drive
(Minimum trigger current : MAX. 3 mA)
(2) High repetitive peak OFF-state voltage (VDRM : 600 V)
(3) High isolation voltage (Viso(rms) : 5 000V)
(4) Recognized by UL1577(double protection isolation)
Approved by CSA
Approved by VDE(DIN EN60747-5-2)
{as model No. "3SD11"}
(6) Lead-free components (adaptable to RoHS directive)
(1) OA equipment
(2) FA power supply
(3) Vending machine
(4) SSRs
Features
*1 50Hz sine wave
*2 AC for 1 minute,
RH=40 to 60%, f=60Hz
*3 For 10s
Parameter
Symbol
Ratings
Unit
Input
Forward current
IF
50
100
mA
Reverse voltage
VR
6
1.2
V
Output
RMS ON-state current
IT(rms)
mA
Peak one cycle surge current
*1
Isurge
A
Repetitive peak OFF-state voltage
VDRM
V
Isolation voltage
*2
Viso(rms)
5.0
kV
Operating temperature
Topr
-30 to +100
Storage temperature
Tstg
-55 to +125
Soldering temperature
*3
Tsol
260
600
1/1
(Unit:mm)
(Ta=25
°C)
(Ta=25
°C)
°C
°C
°C
Parameter
Conditions
Input
Forward voltage
IF
=20 mA
ON-state voltage
Output
VD
=6 V
Critical rate of rise of OFF-state voltage
VD
=1/√−2 • V
DRM
Transfer
charac-
teristics
VD
=6 V, R
L
=100 Ω
VD
=6 V, R
L
=100 Ω, I
F
=10 mA
MIN.
−
−
0.1
1 000
5
×1010
TYP.
1.2
−
−
1011
MAX.
1.4
2.5
3.5
−−
−
Holding current
Symbol
VF
VT
IH
dV/dt
IFT
Isolation resistance
RISO
IT
=0.1 A
Unit
V
Reverse current
VR=3 V
VD=VDRM
IR
Repetitive peak OFF-state current
IDRM
mA
−−
10−5
A
−−
10−6
A
V/
µs
−
−
3
mA
Ω
V
Turn-on time
−−
100
ton
µs
DC
=500 V, 40 to 60 %RH
Minimum trigger current
3SD11
Under development
New product
D
4
-


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