1N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-052,I

PARAMETER

SYMBOL

RATINGS

UNIT

1N60-A

600

V

Drain-Source Voltage

1N60-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

1.2

A

Continuous Drain Current

1.2

A

Pulsed Drain Current (Note 1)

4.8

A

Single Pulsed (Note 2)

50

mJ

Avalanche Energy

Repetitive (Note 1)

4.0

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

SOT-223

1

W

TO-251

28

W

TO-252

28

W

TO-220

40

W

TO-220F

21

W

1

W

Power Dissipation

TO-126

12.5

W

Junction Temperature

+150

℃

Operating Temperature

-55 ~ +150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-223

150

TO-251

110

TO-252

110

TO-220

62.5

TO-220F

62.5

TO-92

140

Junction-to-Ambient

TO-126

132

℃

/W

SOT-223

14

TO-251

4.53

TO-252

4.53

TO-220

3.13

TO-220F

5.95

Junction-to-Case

TO-126

10

℃

/W