2SB1188G-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB1188

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-041.B

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-40

Collector -Emitter Voltage

VCEO

-30

Emitter -Base Voltage

VEBO

-5

Peak Collector Current

ICM

-7

DC Collector Current

-3

Base Current

-0.6

Power Dissipation

0.5

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

BVCBO

IC= -50μA

-40

Collector Emitter Breakdown Voltage

BVCEO

IC= -1mA

-30

Emitter Base Breakdown Voltage

BVEBO

IE=-50μA

-5

Collector Cut-Off Current

ICBO

VCB=-30V,IE=0

-1

μA

Emitter Cut-Off Current

IEBO

VEB=-4V,IC=0

-1

μA

hFE1

VCE=-2V,Ic=-20mA

200

DC Current Gain(Note)

hFE2

VCE=-2V,Ic=-1A

100

150

400

Collector-Emitter Saturation Voltage

VCE(SAT) Ic=-2A,IB=-0.2A

-0.3

-0.5

Base-Emitter Saturation Voltage

VBE(SAT) Ic=-2A,IB=-0.2A

-1.0

-2.0

Current Gain Bandwidth Product

VCE=-5V,Ic=-0.1A

MHz

Output Capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Note: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF hFE2

RANK

RANGE

100 ~ 200

160 ~ 320

200 ~ 400

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