4N65L-TQ2-R datasheet(2/8 Pages) UTC

2 / 8 page

4N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-397.B

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

4.4

Continuous

4.0

Drain Current

Pulsed (Note 2)

IDM

Single Pulsed (Note 3)

EAS

260

Avalanche Energy

Repetitive (Note 2)

EAR

10.6

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

106

TO-220F/TO-220F1

TO-251

Power Dissipation

TO-252

Junction Temperature

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

650

Drain-Source Leakage Current

IDSS

VDS = 650 V, VGS = 0 V

μA

Forward

VGS = 30 V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient

△

DSS/△TJ

ID = 250 μA, Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 2.2 A

2.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

520 670

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS = 25 V, VGS = 0 V, f = 1MHz

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