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7N60L-X-TQ2-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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7N60L-X-TQ2-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() 7N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-076,Ja ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Total Gate Charge QG 29 38 nC Gate-Source Charge QGS 7 nC Gate-Drain Charge QGD VDS=480V, ID=7.4A, VGS=10 V (Note 1, 2) 14.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A Reverse Recovery Time tRR 320 ns Reverse Recovery Charge QRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) 2.4 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature CLASSIFICATION OF RDS(ON) RANK - F M Q R VALUE 1.0Ω 1.2Ω 1.2Ω 1.2Ω 1.0Ω |
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