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K1109-X-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # K1109-X-AE3-R
Description  N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

K1109-X-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  K1109-X-AE3-R Datasheet HTML 1Page - Unisonic Technologies K1109-X-AE3-R Datasheet HTML 2Page - Unisonic Technologies K1109-X-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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K1109
N-CHANNEL JFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-009.Ga
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSX
20
V
Gate-Drain Voltage
VGDO
-20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PD
80
mW
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Drain Current
IDSS
VDS=5.0V, VGS=0
40
600
μA
Gate Off Voltage
VGS(OFF)
VDS=5.0V, ID=1.0μA
-0.1
-1.0
V
Forward Transfer Admittance
lYFSl
VDS=5.0V, VGS=0, f=1kHz
600
1600
μS
Input Capacitance
CISS
VDS=5.0V, VGS=0, f=1.0MHz
7.0
8.0
pF
Noise Voltage
NV
1.8
3.0
V
CLASSIFICATION OF IDSS
RANK
J32
J33
J34
J35
J36
J37
RANGE
40-70
60-110
90-180
150-300
200-450
300-600



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