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IXFX21N100F Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFX21N100F Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page  © 2010 IXYS CORPORATION, All Rights Reserved DS98880A(05/10) Features RF Capable MOSFETs Double Metal Process for Low Gate Resistive Avalanche Rated Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching DC Choppers 13.5 MHz Industrial Applications Pulse Generation Laser Drivers RF Amplifiers HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic R g, High dV/dt, Low trr IXFK21N100F IXFX21N100F V DSS = 1000V I D25 = 21A R DS(on) ≤≤≤≤≤ 500mΩ Ω Ω Ω Ω t rr ≤≤≤≤≤ 250ns Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1000 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 1000 V V GSS Continuous ± 20 V V GSM Transient ± 30 V I D25 T C = 25°C21 A I DM T C = 25°C, Pulse Width Limited by TJM 84 A I A T C = 25°C21 A E AS T C = 25°C 2.5 J dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 500 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 1mA 1000 V V GS(th) V DS = VGS, ID = 4mA 3.0 5.5 V I GSS V GS = ± 20V, VDS = 0V ± 200 nA I DSS V DS = VDSS, VGS= 0V 100 μA T J = 125°C 2 mA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 500 m Ω G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXFX) Tab G D S TO-264 (IXFK) S G D Tab |
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