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IXFX24N100F Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFX24N100F Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() © 2002 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1000 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 1000 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C24 A I DM T C = 25 °C, pulse width limited by T JM 96 A I AR T C = 25 °C24 A E AR T C = 25 °C60 mJ E AS T C = 25 °C 3.0 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns T J ≤ 150°C, R G = 2 Ω P D T C = 25 °C 560 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in.) from case for 10 s 300 °C M d Mounting torque TO-264 0.4/6 Nm/lb.in. Weight PLUS 247 6 g TO-264 10 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1mA 1000 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.5 V I GSS V GS = ±20 V, VDS = 0 ±200 nA I DSS V DS = VDSS T J = 25°C 100 mA V GS = 0 V T J = 125°C 3 mA R DS(on) V GS = 10 V, ID = 0.5 • ID25 0.39 Ω Note 1 98874-A(8/02) PLUS 247TM (IXFX) G D (TAB) G = Gate D = Drain S = Source TAB = Drain S G D (TAB) TO-264 AA (IXFK) HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic Rg High dV/dt, Low t rr Features RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages PLUS 247TM package for clip or spring mounting Space savings High power density IXFX 24N100F IXFK 24N100F V DSS = 1000 V I D25 = 24 A R DS(on) = 0.39 Ω Ω Ω Ω Ω t rr ≤ ≤≤≤≤ 250 ns |
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