IXFN80N50P datasheet(1/5 Pages) IXYS

Part #	IXFN80N50P

Description	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 150° C

500

V

DGR

T

J

= 25

° C to 150° C; R

GS = 1 MΩ

500

V

GS

Transient

± 40

V

GSM

Continuous

± 30

V

I

D25

T

C = 25° C66

A

I

DM

T

C = 25° C, pulse width limited by TJM

200

A

I

AR

T

C = 25° C80

A

E

AR

T

C = 25° C80

mJ

E

AS

T

C = 25° C

3.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 2 Ω

P

D

T

C = 25° C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz; I

ISOL ≤1

mA

2500

V~

M

d

Mounting torque

1.5/13 Nm/ib.in.

Terminal connection torque (M4)

1.5/13 Nm/ib.in.

Weight

30

g

Either source tab S can be used forsource

current or Kelvin gate return.

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 500 µA

500

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ± 30 VDC, VDS = 0

± 200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25, Note 1

65

m

Ω

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l Fast intrinsic diode

l International standard package

l Unclamped Inductive Switching (UIS)

rated

l UL recognized.

l Isolated mounting base

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXFN 80N50P

V

DSS

= 500 V

I

D25

=

66 A

R

DS(on)

≤≤≤≤≤

65 m

Ω

t

rr

≤≤≤≤≤ 200 ns

DS99477E(01/06)

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

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