IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 100N50P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

50

80

S

C

iss

20

nF

C

oss

V

GS

= 0 V, V

1700

pF

C

rss

140

pF

t

d(on)

36

ns

t

r

V

29

ns

t

d(off)

R

G

= 1

Ω (External)

110

ns

t

f

26

ns

Q

g(on)

240

nC

Q

gs

V

96

nC

Q

gd

78

nC

R

thJC

0.12

° C/W

R

thCS

0.05

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

100

A

I

SM

Repetitive

250

A

V

SD

I

1.5

V

t

rr

I

200

ns

Q

RM

V

0.6

µC

I

RM

6.0

A

Notes:

1. Pulse test, t

≤300 µs, duty cycle d≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

Test current I

SOT-227B Outline