IXFN140N20P datasheet(1/5 Pages) IXYS

Part #	IXFN140N20P

Description	PolarHT HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

200

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2.5

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 150°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 70 A

18

m

Ω

V

GS = 15 V, ID = 140A

14

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C

200

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

200

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

115

A

I

D(RMS)

External lead current limit

100

A

I

DM

T

C = 25°C, pulse width limited by TJM

280

A

I

AR

T

C = 25°C60

A

E

AR

T

C = 25°C

100

mJ

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 4 Ω

P

D

T

C = 25°C

680

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

M

d

Terminal torque

1.13/10 Nm/lb.in.

Mounting torque

1.13/10 Nm/lb.in.

Weight

30

g

DS99245E(03/06)

PolarHTTM HiPerFET

Power MOSFET

IXFN 140N20P

N-Channel Enhancement Mode

Fast Intrinsic Diode

Features

International standard package

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic diode

Advantages

Easy to mount

Space savings

High power density

V

DSS

= 200

V

I

D25

=115

A

R

DS(on) ≤

≤≤≤≤ 18 mΩ

Ω

t

rr

≤≤≤≤≤ 150 ns

Either source tab S can be used forsource

current or Kelvin gate return.

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

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