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IXFN170N30P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN170N30P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page ![]() © 2008 IXYS CORPORATION, All rights reserved DS100001(06/08) PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN170N30P Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 3mA 300 V V GS(th) V DS = VGS, ID = 1mA 2.5 4.5 V I GSS V GS = ±20V, VDS = 0V ±200 nA I DSS V DS = VDSS 25 μA V GS = 0V T J = 125°C 1.5 mA R DS(on) V GS = 10V, ID = 85A, Note 1 18 m Ω V DSS = 300V I D25 = 138A R DS(on) ≤≤≤≤≤ 18mΩ Ω Ω Ω Ω t rr ≤≤≤≤≤ 200ns S G S D miniBLOC, SOT-227 B E153432 G = Gate D = Drain S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source Preliminary Technical Information Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 300 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 300 V V GSS Continuous ±20 V V GSM Transient ± 30 V I D25 T C = 25°C 138 A I LRMS External lead current limit 100 A I DM T C = 25°C, pulse width limited by TJM 500 A I A T C = 25°C85 A E AS T C = 25°C5 J dV/dt I S ≤ I DM, VDD ≤ VDSS,TJ ≤ 150°C 20 V/ns P D T C = 25°C 890 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from case for 10s 300 °C V ISOL 50/60 Hz, RMS t = 1min 2500 V~ I ISOL ≤ 1mA t = 1s 3000 V~ M d Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.3/11.5 Nm/lb.in. Weight 30 g Features • Fast intrinsic diode • Avalanche Rated • Unclamped Inductive Switching (UIS) rated • Very low R th results high power dissipation • Low R DS(ON) and Q G • Low package inductance Advantages • Low gate charge results in simple drive requirement • Improved Gate, Avalanche and dynamic dv/dt ruggedness • High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor control • Uninterrupted power supplies • High speed power switching applications |
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