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IXFA7N80P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFA7N80P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2010 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 800 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 800 V V GSS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25°C7 A I DM T C = 25°C, Pulse Width Limited by TJM 18 A I A T C = 25°C4 A E AS T C = 25°C 300 mJ dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 200 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062in.) from Case for 10s 300 °C T sold Plastic Body for 10 Seconds 260 °C M d Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N80P IXFP7N80P V DSS = 800V I D25 = 7A R DS(on) ≤ ≤≤≤≤ 1.44 Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 250ns DS99597F(04/10) G = Gate D = Drain S = Source Tab = Drain TO-263 AA (IXFA) G D S TO-220AB (IXFP) D (Tab) G S D (Tab) PolarTM HiPerFETTM Power MOSFET Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 800 V V GS(th) V DS = VGS, ID = 1mA 3.0 5.0 V I GSS V GS = ± 30V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS = 0V 25 μA T J = 125°C 500 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Notes 1, 2 1.44 Ω Features International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low Q G Advantages Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications |
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