IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN38N100Q2

Note: 1. Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

miniBLOC, SOT-227 B Outline

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004

IXYS MOSFETs and IGBTs are covered

4,835,592 4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1 6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1 6,534,343

6,710,405 B26,759,692

7,063,975 B2

4,881,106 5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B27,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

24

40

S

C

iss

13.5

nF

C

oss

V

1035

pF

C

rss

180

pF

t

d(on)

Resistive Switching Time

25

ns

t

r

V

28

ns

t

d(off)

R

57

ns

t

f

15

ns

Q

G(on)

250

nC

Q

GS

V

60

nC

Q

GD

105

nC

R

thJC

0.14

°C/W

R

thCK

0.05

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

38

A

I

SM

Repetitive, pulse width limited by T

JM

152

A

V

SD

I

1.5

V

t

rr

300

ns

Q

RM

1.4

μC

I

RM

9A

I

-di/dt = 100 A/

μs

V