IXFN64N50P_09 datasheet(1/4 Pages) IXYS

Part #	IXFN64N50P

Description	Polar Power MOSFET HiPerFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

DS99349F(05/09)

PolarTM Power MOSFET

HiPerFETTM

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN64N50P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200

nA

I

DSS

V

DS = VDSS, VGS= 0V

25

μA

T

J = 125°

1

mA

R

DS(on)

V

GS = 10V, ID = 32A, Note 1

85

m

Ω

V

DSS

= 500V

I

D25

= 50A

R

DS(on)

≤≤≤≤≤ 85mΩ

Ω

t

rr

≤≤≤≤≤ 200ns

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

±30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

50

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

150

A

I

A

T

C = 25°C64

A

E

AS

T

C = 25°C

2.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

625

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in.

Terminal Connection Torque

1.3/11.5

Nm/lb.in.

Weight

30

g

Features

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500 V~

Fast Intrinsic Diode

Avalanche Rated

Low R

DS(on)

Advantages

Low Gate Drive Requirement

High Power Density

Applications:

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

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