IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN420N10T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

110

185

S

C

iss

47

nF

C

oss

V

4390

pF

C

rss

530

pF

R

Gi

Gate Input Resistance

1.46

Ω

t

d(on)

47

ns

t

r

155

ns

t

d(off)

115

ns

t

f

255

ns

Q

g(on)

670

nC

Q

gs

V

170

nC

Q

gd

195

nC

R

thJC

0.14

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

420

A

I

SM

Repetitive, Pulse Width Limited by T

JM

1680

A

V

SD

I

1.2

V

t

rr

140 ns

Q

RM

0.38

μC

I

RM

7.00

A

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V