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SAF3560 Datasheet(PDF) 13 Page - NXP Semiconductors

Part # SAF3560
Description  Terrestrial digital radio processor Providing new data services
PDF  20 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

SAF3560 Datasheet(HTML) 13 Page - NXP Semiconductors

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SAF3560_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product short data sheet
Rev. 03 — 15 September 2010
13 of 20
NXP Semiconductors
SAF3560
Terrestrial digital radio processor
7.
Limiting values
[1]
Class 2 according to JEDEC JESD22-A114.
[2]
According to AEC-Q100-G.
8.
Thermal characteristics
The SAF3560 has no special thermal requirements. The backside contact is needed for
electrical reasons. For soldering considerations, see Section 10.
[1]
The overall Rth(j-a) is based on JEDEC conditions and can vary depending on the board layout. To minimize
the effective Rth(j-a) all power and ground pins must be connected to the power and ground layers directly.
An ample amount of copper area directly under the SAF3560 with a number of through-hole plating, which
connect to the ground layer (four-layer board: second layer), can also reduce the effective Rth(j-a). Do not
use any solder-stop varnish under the chip. In addition the use of soldering glue with a high thermal
conductance after curing is recommended.
Table 16.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDDA(OSC)(1V2)
oscillator analog supply voltage (1.2 V)
−0.5
+1.7
V
VDDA(PLL)(1V2)
PLL analog supply voltage (1.2 V)
−0.5
+1.7
V
VDDD(C)(1V2)
core digital supply voltage (1.2 V)
−0.5
+1.7
V
VDDD(DAB)(3V3)
DAB digital supply voltage (3.3 V)
−0.5
+3.9
V
VDDD(DSP)(3V3)
DSP digital supply voltage (3.3 V)
−0.5
+3.9
V
VDDD(JTAG)(3V3)
JTAG digital supply voltage (3.3 V)
−0.5
+3.9
V
VDDD(MC)(3V3)
microcontroller digital supply voltage (3.3 V)
−0.5
+3.9
V
VDDD(SDRAM)(3V3) SDRAM digital supply voltage (3.3 V)
−0.5
+3.9
V
VDDD(MEM)(1V2)
memory digital supply voltage (1.2 V)
−0.5
+1.7
V
Tamb
ambient temperature
−40
+85
°C
Tstg
storage temperature
−65
+150
°C
VESD
electrostatic discharge voltage
human body model
[1]
-
±2000
V
charged device model
[2]
corner pins
-
±750
V
other pins
-
±500
V
Ilu
latch-up current
all supply voltages
below the maximum
values listed in this
table
[2]
−100
+100
mA
Table 17.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] 26.3
K/W



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